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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV99/SL UHF power transistor
Product specification September 1991
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * Emitter-ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base. PINNING - SOT172D PIN 1 2 3 4 base collector emitter DESCRIPTION emitter WARNING Product and environmental safety - toxic materials
2 3
handbook, halfpage halfpage
BLV99/SL
PIN CONFIGURATION
1 c
b
MBB012
e
4 Top view
MSB007
Fig.1 Simplified outline and symbol.
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Tmb = 25 C in a common emitter class-B test circuit. MODE OF OPERATION c.w. narrow band f (MHz) 900 24 VCE (V) 2 PL (W) Gp (dB) >8 c (%) > 55
September 1991
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current total power dissipation storage temperature range junction operating temperature CONDITIONS open emitter open base open collector DC value peak value f > 1 MHz f > 1 MHz; Tmb = 50 C - - - - - - -65 - MIN.
BLV99/SL
MAX. 50 27 3.5 200 600 6 150 200
UNIT V V V mA mA W C C
handbook, halfpage
12
MBK466
Ptot (W) 8
4
0 0 40 80 120 Th (C) 160
(I) Continuous RF operation. (II) Short time operation during mismatch.
Fig.2 Power/temperature derating curves.
THERMAL RESISTANCE SYMBOL Rth j-mb(RF) PARAMETER from junction to mounting base CONDITIONS PL = 4.5 W; Tmb = 25 C MAX. 20 UNIT K/W
September 1991
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE ESBR PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter leakage current DC current gain second breakdown energy CONDITIONS open emitter; IC = 5 mA VBE = 0; IC = 10 mA open collector; IE = 0.5 mA VBE = 0; VCE = 27 V VCE = 20 V; IC = 150 mA L = 25 mH; RBE = 10 ; f = 50 Hz VCB = 24 V; IE = Ie = 0; f = 1 MHz VCE = 24 V; IC = 0; f = 1 MHz MIN. 50 27 3.5 - 25 0.5 - - - - - - TYP.
BLV99/SL
MAX. - - - 2 - - V V V
UNIT
mA
mJ
Cc
collector capacitance
-
3
-
pF
Cre
feedback capacitance
-
1.3
-
pF
handbook, halfpage
100
MBK467
handbook, halfpage
8
MBK468
hFE 80
Cc (pF) 6
60 4 40 2 20
0 0 0.1 0.2 0.3 0.4 IC (A) 0.5
0 0 10 20 VCB (V) 30
VCE = 20 V; Tj = 25 C.
IE = ie = 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector current, typical values.
Fig.4
Collector capacitance as a function of collector-base voltage, typical values.
September 1991
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance Tmb = 25 C in a common emitter class-B test circuit. MODE OF OPERATION c.w. narrow band 900 f (MHz) 24 VCE (V) 2 PL (W) Gp (dB) >8 typ. 9.3
BLV99/SL
c (%) > 55 typ. 63
handbook, halfpage
10
MBK469
100
handbook, halfpage
3
MBK470
Gp Gp (dB)
C (%) C
PL (W) 2
5
50
1
0 0 1 2 PL (W) 3
0
0 0 0.1 0.2 0.3 PS (W) 0.4
Class-B operation; VCE = 24 V; f = 900 MHz; Tmb = 25 C.
Class-B operation; VCE = 24 V; f = 900 MHz; Tmb = 25 C.
Fig.5
Gain and efficiency as functions of load power, typical values.
Fig.6
Load power as a function of drive power, typical values.
Ruggedness in class-B operation The BLV99/SL is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: VCE = 24 V, f = 900 MHz, Tmb = 25 C, and rated output power.
September 1991
5
Philips Semiconductors
Product specification
UHF power transistor
BLV99/SL
handbook, full pagewidth
50
,,,,,, ,,,,,,, ,,,,,, ,,,,,,,
C2 T.U.T. C7 L1 L4 L5 L8 L9 C1 C3 C8 C9 L2 L6 L7 R1 L3 C4 R2 C5
C10 50
+VCC C6
MDA559
Fig.7 Class-B test circuit at f = 900 MHz.
List of components (see test circuit) COMPONENT C1, C3, C8, C9 C2 C4, C6, C10 C5 C7 L1 L2 L3, L7 L4, L5 L6 DESCRIPTION film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor 63 V electrolytic capacitor multilayer ceramic chip capacitor (note 1) stripline (note 2) 7 turns enamelled 0.4 mm copper wire grade 3B Ferroxcube wideband HF choke stripline (note 2) 35 14 mm x 4 mm; int. dia. 6 mm; length 10 mm; leads 2 x 5 mm 31 mm x 2.4 mm 29 mm x 2.4 mm 6 turns enamelled 1 mm copper wire 120 nH VALUE 1.4 to 5.5 pF 4.7 pF 220 pF 1 F 2.2 pF 50 50 nH 48 mm x 2.4 mm int. dia. 2 mm; leads 2 x 5 mm 4312 020 36642 DIMENSIONS CATALOGUE NO. 2222 809 09001
L8 L9 R1, R2 Notes
stripline (note 2) stripline (note 2) 0.4 W metal film resistor
50 50 10 , 5%
1. American Technical Ceramics type 100A or capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 2.2), thickness 132 inch.
September 1991
6
Philips Semiconductors
Product specification
UHF power transistor
BLV99/SL
handbook, full pagewidth
170 mm
70 mm
M2 rivets M3
+VCC R2 R1 C4 L3 L2 C2 L6 L4 L5 L8 C7 L9 C10 L7 C5 C6
L1
C1
C3
C8
C9
MDA560
The components are mounted on one side of a copper clad PTFE fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by fixing screws, hollow rivets and copper straps under the emitters.
Fig.8 Component layout for 900 MHz class-B test circuit.
September 1991
7
Philips Semiconductors
Product specification
UHF power transistor
BLV99/SL
handbook, halfpage
10
MBK471
handbook, halfpage
80
MBK472
ri, xi () 8
RL, XL xi () 60 XL 6 40 4 ri RL
20 2
0 800
850
900
950
1000 f (MHz)
0 800
850
900
950
1000 f (MHz)
Class-B operation; VCE = 24 V; PL = 2 W; Tmb = 25 C.
Class-B operation; VCE = 24 V; PL = 2 W; Tmb = 25 C.
Fig.9
Input impedance (series components) as a function of frequency, typical values.
Fig.10 Load impedance (series components) as a function of frequency , typical values.
handbook, halfpage
12
MBK473
Gp
(dB) 10
8
6
handbook, halfpage
4 Zi ZL
MBA451
2
0 800
850
900
950
1000 f (MHz)
Class-B operation; VCE = 24 V; PL = 2 W; Tmb = 25 C.
Fig.11 Definition of transistor impedance.
Fig.12 Power gain as a function of frequency, typical values.
September 1991
8
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Studless ceramic package; 4 leads
BLV99/SL
SOT172D
D
A Q c D1
H b
4
b1 H
1
3
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 3.71 2.89 0.146 0.114 b 3.31 3.04 0.13 0.12 b1 0.89 0.63 c 0.16 0.10 D 5.20 4.95 D1 5.33 5.08 H 26.17 24.63 1.03 0.97 Q 1.15 0.88 0.045 0.035
0.035 0.006 0.025 0.004
0.205 0.210 0.195 0.200
OUTLINE VERSION SOT172D
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
September 1991
9
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV99/SL
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1991
10

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